Design of a ternary memory cell using cntfets

Author: yvol

August undefined, 2024

WebWith the miniaturization of digital integrated circuits, electronic systems with increased functionality and enhanced performance are preferred. Multi-valued logic design is a promising alternative that offers a higher number of data/information which ... WebThis paper presents a novel design of ternary Static Read Access Memory (SRAM) using Carbon Nano-tube Field Effect Transistors (CNTFETs). Advantages of CNTFET …

An SEU-hardened ternary SRAM design based on efficient ternary C-ele…

WebOct 22, 2024 · This study presents two novel designs of a ternary memory cell using carbon nanotube field effect transistors (CNFETs) with only one supply voltage. In the previous works, a ternary latch has been used to store the ternary value, which has a considerably more static power and lower static noise margin in comparison to a binary … mineral oil for pregnant women

Design of a Ternary Memory Cell Using CNTFETs

WebThis paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional … WebCarbon nanotube-based transistors (CNTFETs) have been shown to exhibit ambipolar field-effect transistor behavior, allowing circuit designers to easily choose between n - and p-conduction channels by applying correct voltages at a polarity gate.In this paper, we explore this ambipolar behavior of the CNTFET to design both binary and ternary content … WebThis paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional … mosel hochwasser

Design of Ternary COS/MOS Memory and Sequential Circuits

Design of Ternary Content-Addressable Memory Using CNTFET

WebA novel hybrid cache replacement and migration policy is proposed; a hybrid macrocell is also designed using a different number of eDRAM, PCM … WebJan 1, 2024 · A ternary content-addressable memory cell using carbon nanotube field-effect transistors (CNTFETs) is presented in this paper. The proposed ternary CAM cell … moselhotel bullayWebOct 26, 2024 · In ternary logic, the CNTFET-based memory cell is designed in . In this design, a buffer is applied for read operation while the transmission gate is utilised for … moselhohe camping

"WebThis paper presents a design of a 3VL memory cell using carbon nano-tube field-effect transistors (CNTFETs). 3VL is a promising alternative to conventional binary logic, as it has better performance in terms of area, power and also reduces interconnect delay. This cell uses a control gate for the write and read operation to make them separate. " - Design of a ternary memory cell using cntfets

Design of a ternary memory cell using cntfets

Noise Margin analysis of Efficient CNTFET- based Standard Ternary ...

WebApr 7, 2024 · However, the increased charge mobility also enhances the leakage power. This work uses CNTFET for designing a low-power eight-transistor static random access memory (8T SRAM) cell. The leakage power of the proposed cell is reduced by 2.21 × compared to conventional 6T SRAM at 0.3 V with similar CNTFET parameters. WebThis paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional …

Did you know?

WebJan 27, 2024 · This paper presents the design of a CNFET-based ternary content-addressable memory (TCAM) cell and rigorously analyzes its performance in terms of power–delay product (PDP) and static noise margin (SNM). The effect of variations of the chiral vector on the performance of the TCAM cell is also comprehensively investigated. WebAug 3, 2012 · In this paper, a novel design of a ternary memory cell based on CNTFETs is proposed; this cell uses a transmission gate for the write operation and a buffer for the read operation to make them separate. Chirality of the CNTFETs is utilized for threshold …

WebSep 1, 2012 · This paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to … WebThe research of ternary logic can be roughly divided into three aspects: mathematical theory, ternary logic devices and basic logic circuits,and the applied research on ternary logic.The theoretical study of ternary logic contains various theorems and logical systems, providing the theoretical basis for the latter two pieces of research.

WebFeb 27, 2015 · Activities and Societies: WORK ON DESIGN OF TERNARY MEMORY USING CNTFET PUBLISHED PAPER IN IEEE CONFERENCE ICECS-2015. MASTERS IN VLSI AND EMBEDDED SYSTEM DESIGN GOVT. ENGG. COLLEGE, RAJKOT WebSep 1, 2012 · This paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional binary logic because it allows simplicity and energy efficiency in modern digital design due to the reduced circuit overhead in interconnects and chip area.

WebDesign of a ternary memory cell using CNTFETs. S Lin, YB Kim, F Lombardi. IEEE transactions on nanotechnology 11 (5), 1019-1025, 2012. 156: 2012: Design of a CNTFET-based SRAM cell by dual-chirality selection. S Lin, YB Kim, F Lombardi. IEEE Transactions on Nanotechnology 9 (1), 30-37, 2009. 114:

WebIn addition, resistive random access memory (RRAM) is also a feasible option for the design of MVL circuits, owing to its multilevel cell capability that enables the storage of multiple resistance states within a single cell. In this manuscript, a design approach for ternary combinational logic circuits while using CNTFETs and RRAM is presented. moselhof borchertWebJun 1, 2016 · This paper has initially presented two ternary CNTFET SRAMs based on a previously suggested standard ternary inverter. Sizing has been performed by grouping … moselis appel d\u0027offreWebIn this paper, the design of ternary logic gates (standard ternary inverter, ternary NAND, ternary NOR) based on carbon nanotube field effect transistor (CNTFET) and resistive random... moselhous.nlWebJan 24, 2024 · In addition, resistive random access memory (RRAM) is also a feasible option for the design of MVL circuits, owing to its multilevel cell capability that enables the storage of multiple resistance ... moselis appel offreWebThis paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional … moselis horaireWebApr 24, 2024 · Using carbon nanotube field effect transistors, (CNTFETs) the MVL gates are made which use N-type CNTFETs without utilizing any resistor. Thus this work helps both ternary and also quaternary logic gates exploiting the threshold voltages of both P and N type transistors. mineral oil for smoke machineWebJan 1, 2024 · This paper proposes a novel SEU-hardened ternary SRAM (TSRAM) cell based on an efficient ternary C-element (TC-element). The proposed design uses one supply voltage and dual-threshold CNTFETs, while the previous CNTFET-based TSRAMs need three different threshold voltages or two supply voltages. mosel hochwasser cochem